Influence of thin inversion layers on Schottky diodes
نویسنده
چکیده
2014 A Schottky diode exhibits a barrier height which increases when the semiconductor doping is superficially inversed. This effect is modellized, so as to show the influence of the main parameters : doping and thickness of the inversion layer, interface state configuration, metal work function. The analysis of a few available experimental results is consistent with the assumption that the interface states are not modified by the inversion layer. Revue Phys. Appl. 21 (1986) 25-33 JANVIER 1986,
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